Paul M. Voyles
Dr. Voyles is an Associate Professor of Materials Science and Engineering at the University of Wisconsin, Madison. He was an Assistant Professor from 2002-2009. He previously was a post-doc at Bell Labs, Murray Hill NJ. He received his Ph.D. degree in Physics from University of Illinois at Urbana-Champaign and B.A. in physics from Oberlin College. He has received an NSF CAREER award and best paper awards from the Microscopy Society of America. His pioneering contributions include the demonstration of the first images of single impurity atoms inside a host crystal using Z-contrast STEM [1], the exploration of the scattering physics behind such images [2,3], and the application of those images to detection of new point defect / dopant complexes in Si [4]. He has extended that work into compound semiconductors [5] and recently developed sub-picometer precision STEM imaging [6]. Dr. Voyles has also used electron nanodiffraction for studying nanometer scale structural order in glasses [7-9].
| 1. | P. M. Voyles, D. A. Muller, J. Grazul, P. H. Citrin, and H.-J. L. Gossmann, “Atomic-scale imaging of individual aopant atoms and clusters in highly n-type Bulk Si,” Nature 416, 826 (2002). |
| 2. | P. M. Voyles, D. A. Muller, and E. J. Kirkland, “Depth-Dependent Imaging of Individual Dopant Atoms in Silicon” Microscopy and Microanalysis 10, 291 (2004). |
| 3. | P. M. Voyles, J. L. Grazul, and D. A. Muller, “Imaging Individual Atoms Inside Crystals with ADF-STEM” Ultramicroscopy 96, 251 (2003). |
| 4. | P. M. Voyles, D. J. Chadi, P. H. Citrin, D. A. Muller, J. L. Grazul, and H-J. L. Gossmann, “Evidence for a New Class of Defects in Highly n-doped Si: Donor-Pair-Vacancy-Interstitials” Phys. Rev. Lett. 91, 125505 (2003). |
| 5. | A. B. Yankovich, B. Puchala, Fei Wang, Jung-Hun Seo, D. Morgan, Xudong Wang, Z. Ma, A. V. Kvit, and P. M. Voyles “Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires”, Nano Letters 12, 1311-1316 (2012). |
| 6. | B. Berkels, A. B. Yankovich, F. Shi, P. M. Voyles, W. Dahmen, R. Sharpley, P. Binev, “High precision STEM imaging by non-rigid alignment and averaging of a series of short exposures,” 2012 Microscopy & Microanalysis Meeting, Phoenix, AZ, 2012. |
| 7. | Jinwoo Hwang, Z. H. Melgarejo, Y. E. Kalay, I. Kalay, M. J. Kramer, D. S. Stone, and P. M. Voyles “Nanoscale structure and structural relaxation in Zr50Cu45Al5 bulk metallic glass” Phys. Rev. Lett. 108, 195505 (2012); |
| 8. | W.G. Stratton, J. Hamann, J.H. Perepezko, P.M. Voyles, X. Mao and S.V. Khare, “Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy”, Appl. Phys. Lett. 86, 141910 (2005). |
| 9. | P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, “Absence of an Abrupt Phase Change from Polycrystalline to Amorphous in Silicon with Deposition Temperature” Phys. Rev. Lett. 86, 5514 (2001). |
